The 2N3819 is a more typical and ideal JFET than the 2N4392; is its transfer characteristic closer to a parabola (that is, is its transconductance closer to linear)? Note that the 2N3819 uses the pin. The replacement JFETs seem to bias up all right. Of course, I don't know how they'll sound with your guitar or microphone. I think these devices are worth a try. I recommend trying one of the less-expensive parts. The cheapest JFET is the Fairchild J113, for which Mouser will give you a wholesale price.
2n3819 Jfet Datasheet
N Channel Jfet
2N3819 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N3819
Тип транзистора: JFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 25 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Максимально допустимый постоянный ток стока |Id|: 0.05 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 300 Ohm
Тип корпуса: TO92
2N3819 Datasheet (PDF)
0.1. 2n3819-p.pdf Size:65K _philips
0.2. 2n3819.pdf Size:29K _fairchild_semi
2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25
0.3. 2n3819 2.pdf Size:53K _vishay
2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-a
0.4. 2n3819.pdf Size:170K _onsemi
2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25C 350 mWDerate above 25C 2.8 mW/CSt
2n189 Data
![2n3819 2n3819](/uploads/1/1/8/2/118228995/226602123.jpg)
Другие MOSFET... AP3R604AGH-HF, AP3R604GH-HF, AP3R604GMT-HF, AP4002H, AP4002I-HF, AP4002J, AP4002P, AP4002S, 2N7002, 2SK427, 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447.